shantou huashan electronic devices co.,ltd . insulated type tria c (to-220f package) features * repetitive peak off-state voltage: 600v * r.m.s on-state current(i t(rms) =8a) * high commutation dv/dt general description the triac HTF8A60 is suitable for ac switching application, phase control application such as heater cont rol, motor control, lighting control, and static switching relay. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol items min. typ. max. unit conditions i drm repetitive peak off-state current 2.0 ma vd=vdrm, single phase,half wave, tj=125 v tm peak on-state voltage 1.4 v i t =12a, inst. measurement i+ gt1 gate trigger current 30 ma v d =6v, r l =10 ohm i- gt1 gate trigger current 30 ma v d =6v, r l =10 ohm i- gt3 gate trigger current 30 ma v d =6v, r l =10 ohm v+ gt1 gate trigger voltage 1.5 v v d =6v, r l =10 ohm v- gt1 gate trigger voltage 1.5 v v d =6v, r l =10 ohm v- gt3 gate trigger voltage 1.5 v v d =6v, r l =10 ohm v gd non-trigger gate voltage 0.2 v t j =125 ,v d =1/2v drm (dv/dt)c critical rate of rise of off-state voltage at commutation 10 v/s tj=125 ,vd=2/3vdrm (di/dt)c=-4a/ms i h holding current 15 ma rth(j-c) thermal resistance 3.7 /w junction to case t stg storage temperature - 40~125 t j operating junction temperature - 40~125 p gm peak gate power dissipation 5w v drm repetitive peak off-state voltage 600v i t rms r.m.s on-state current ta=89 8a v gm peak gate voltage 10v i gm peak gate current 2.0a i tsm surge on-state current (one cycl e, 50/60hz,peak,non-repetitive) 80/88a v iso isolation breakdown voltage rms.a.c.1 minute 1500v HTF8A60 1 2 3 to-220f
shantou huashan electronic devices co.,ltd . performance curves fig 1. gate characteristics fig 2. on-state voltage gate current (ma) on-state voltage [v] fig 3. gate trigger voltage vs. junction fig 4. on state current vs. maximum temperature power dissipation junction temperature [ ] rms on-state current [a] fig 5. on state current vs. fig 6. surge on-state current rating allowable case temperature ( non-repetitive ) rms on-state current [a] time cycles htp8a60 allowable case temp. [ c] surge on-state current [a] power dissipation [w] on-state current [ a ] gate voltage (v) 10 1 10 2 10 3 0.1 1 10 10 0 10 1 10 2
shantou huashan electronic devices co.,ltd . fig 7. gate trigger current vs. fig 8. transient thermal impedance junction temperature junction temperature [ ] timesec fig 9. gate trigger characteristics test circuit 10 10 10 test procedure test procedure test procedure htp8a60 transient thermal im p edance [ /w ]
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